NX5315EH_06 Datasheet, PDF (1/7 Pages) California Eastern Labs – 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

LASER DIODE
NX5315EH
1 310 nm FOR FTTH PON APPLICATION
InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5315EH is a 1 310 nm Multiple Quantum Well (MQW) structured
Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is
designed for application up to 1.25 Gb/s.
APPLICATION
• FTTH PON (B-PON, G-PON, GE-PON 10 km) system
FEATURES
• Optical output power
Po = 13.0 mW
• Low threshold current
lth = 6 mA
• Differential Efficiency
ηd = 0.5 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package
φ 5.6 mm
• Focal point
6.35 mm
Document No. PL10531EJ03V0DS (3rd edition)
Date Published July 2006 NS CP(K)
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