NX5315 Datasheet, PDF (1/5 Pages) California Eastern Labs – NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS

PRELIMINARY DATA SHEET
NECʼs 1310 nm InGaAsP MQW FP
LASER DIODE IN CAN PACKAGE NX5315 SERIES
FOR FTTH PON APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER:
Po = 13.0 mW
• LOW THRESHOLD CURRENT :
Ith = 6 mA
• DIFFERENTIAL EFFICIENCY:
ηd =0.5 W/A
• WIDE OPERATING TEMPERATURE RANGE:
TC = -40 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
ø5.6 mm
• FOCAL POINT:
6.35 mm
APPLICATIONS
• FTTH PON (B-PON, G-PON, GE-PON 10 Km) system
DESCRIPTION
NEC's NX5315 Series is a 1 310 nm Multiple Quantum Well
(MQW) structured Fabry-Perot (FP) laser diode with InGaAs
monitor PIN-PD. These devices are designed for application
up to 1.25 Gb/s.
California Eastern Laboratories