NX5313 Datasheet, PDF (1/4 Pages) California Eastern Labs – 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS

PRELIMINARY DATA SHEET
NEC’s 1310 nm InGaAsP MQW FP
LASER DIODE IN CAN PACKAGE NX5313 SERIES
FOR FTTH PON APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER:
Po = 13.0 mW
• LOW THRESHOLD CURRENT :
Ith = 6 mA
• DIFFERENTIAL EFFICIENCY:
ηd =0.5 W/A
• WIDE OPERATING TEMPERATURE RANGE:
TC = -40 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
ø5.6 mm
• FOCAL POINT:
6.35 mm
• LD BEAM ANGLE OPTIMIZED FOR 8 DEGREE
ANGLED SMF
APPLICATIONS
• FTTH PON (B-PON, G-PON, GE-PON 10 Km) system
DESCRIPTION
NEC's NX5313 Series is a 1310 nm Multiple Quantum Well
(MQW) structured Fabry-Perot (FP) laser diode with InGaAs
monitor PIN-PD. These devices are designed for application
up to 1.25 Gb/s.
California Eastern Laboratories