NX5312_06 Datasheet, PDF (1/7 Pages) California Eastern Labs – 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

LASER DIODE
NX5312 Series
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s,
InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5312 Series is a 1 310 nm Multiple Quantum Well (MQW)
structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
devices are designed for application up to 1.25 Gb/s.
APPLICATIONS
• STM-1 (L-1.1), STM-4 (S-4.1), ITU-T recommendations
• FTTH (Fiber To The Home) system
FEATURES
• Optical output power
Po = 5.0 mW
• Low threshold current
lth = 6 mA
• Differential Efficiency
ηd = 0.45 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package
φ 5.6 mm
• Focal point
6.35 mm
Document No. PL10528EJ02V0DS (2nd edition)
Date Published July 2006 NS CP(K)
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