NX5311 Datasheet, PDF (1/4 Pages) California Eastern Labs – 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS

PRELIMINARY DATA SHEET
NEC’s 1310 nm InGaAsP MQW FP
LASER DIODE IN CAN PACKAGE NX5311 SERIES
FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER:
Po = 10.0 mW
• LOW THRESHOLD CURRENT :
Ith = 6 mA
• DIFFERENTIAL EFFICIENCY:
ηd =0.50 W/A
• WIDE OPERATING TEMPERATURE RANGE:
TC = -40 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
ø5.6 mm
• FOCAL POINT:
7.5 mm
APPLICATIONS
• FTTH PON (B-PON, G-PON, GE-PON 10 km) system
DESCRIPTION
NEC's NX5311 Series is a 1310 nm Multiple Quantum Well
(MQW) structured Fabry-Perot (FP) laser diode with InGaAs
monitor PIN-PD. These devices are designed for application
up to 1.25 Gb/s.
California Eastern Laboratories