NR8360JP-BC Datasheet, PDF (1/2 Pages) California Eastern Labs – 30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION

PRELIMINARY DATA SHEET
NEC's ø30 µm
InGaAs APD IN DIP PACKAGE ^NR8360JP-BC
FOR OTDR APPLICATION
FEATURES
• HIGH QUANTUM EFFICIENCY:
η = 85 % @ λ = 1310 nm
η = 80 % @ λ = 1550 nm
• SMALL DARK CURRENT: ID = 2 nA
• HIGH-SPEED RESPONSE: fC = 1.2 GHz @ M = 20
• INTERNAL THERMOELECTRIC COOLER
• HERMETICALLY SEALED
14-PIN DUAL IN-LINE PACKAGE
DESCRIPTION
NEC's NR8360JP-BC is an InGaAs avalanche photodiode
module with single mode fiber. A thermoelectric cooler is
integrated enabling the temperature control of the APD chip. It
is designed for long-reach optical communications and optical
test instruments, especially OTDR.
ELECTRO-OPTICAL CHARACTERISTICS (TAPD = 25°C, TC = -20 to +55°C, unless otherwise specified)
PART NUMBER
NR8360JP-BC
SYMBOLS
VBR
δ¹
ID
IDM
Ct
fC
η
S
M
X
F
R
B
IC
VC
∆T3
PARAMETERS AND CONDITIONS
UNITS
Reverse Breakdown Voltage, ID = 100 µA
V
Temperature Coefficient of Reverse Breakdown Voltage
%/°C
Dark Current, VR = VBR X 0.9
nA
VR = VBR X 0.9, TC = 55°C, IC = 0.8 A
nA
Multiplied Dark Current, M = 2 to 10
nA
Terminal Capacitance, VR = VBR X 0.9, f = 1 MHz
pF
Cut-off Frequency, M = 10
M = 20
GHz
GHz
Quantum Efficiency, λ = 1310 nm
%
λ = 1550 nm
%
Sensitivity,
λ = 1310 nm
A/W
λ = 1550 nm
A/W
Multiplication Factor, λ = 1310 nm, IOP = 1.0 µA,
VR = V (@ ID = 1 µA)
Excess Noise Factor², λ = 1310 nm, 1550 nm, IOP = 1.0 µA,
M = 10, f = 35 MHz, B = 1 MHz
Thermistor Resistance
kΩ
B Constant
K
Cooler Current, ∆T = 45°C
A
Cooler Voltage, IC = 0.8 A
V
Cooling Capacity, IC = 0.8 A
°C
Notes:
VBR (25°C + ∆T °C) – V(BR (25°C)
1. δ = _{∆T °C • VBR (25°C)}
2. F = M^X
3. ∆T = |TC —TAPD|
MIN
50
1.0
70
65
0.73
20
9.5
3350
45
TYP
70
0.2
5
2
0.2
1.0
1.2
85
80
0.89
1.00
40
0.7
5
10.0
3450
0.6
1.1
MAX
100
10
5
2.0
1.7
10.5
3550
0.8
1.5
California Eastern Laboratories