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NR6300EZ Datasheet, PDF (1/7 Pages) California Eastern Labs –  30 m InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS
PHOTO DIODE
NR6300EZ
 30 m InGaAs AVALANCHE PHOTO DIODE
FOR OTDR APPLICATIONS
DESCRIPTION
The NR6300EZ is an InGaAs avalanche photo diode, and can be used in OTDR systems.
FEATURES
• Small dark current
• Small terminal capacitance
• High sensitivity
• High speed response
• Detecting area size
ID = 5 nA
Ct = 0.35 pF @ 0.9 V(BR)R
S = 0.94 A/W @  = 1 310 nm, M = 1
fC = 2.5 GHz MIN. @  = 1 310 nm, M = 10
 30 m
Document No. PL10701EJ02V0DS (2nd edition)
Date Published January 2010 NS
The mark  shows major revised points.
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