NESG3032M14 Datasheet, PDF (1/6 Pages) California Eastern Labs – NPN SILICON GERMANIUM RF TRANSISTOR

NPN SILICON GERMANIUM RF TRANSISTOR
NESG3032M14
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• 4-pin lead-less minimold (M14, 1208 package)
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG3032M14 NESG3032M14-A
NESG3032M14-T3 NESG3032M14-T3-A
4-pin lead-less minimold
(M14, 1208 package)
(Pb-Free)
50 pcs
(Non reel)
10 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
12.0
V
Collector to Emitter Voltage
VCEO
4.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
Total Power Dissipation
IC
Ptot ^Note
35
150
mA
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm² × 1.0 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10575EJ01V0DS (1st edition)
Date Published July 2005 CP(K)
© NEC Compound Semiconductor Devices, Ltd. 2005