NESG3031M05 Datasheet, PDF (1/9 Pages) NEC – NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NPN SILICON GERMANIUM RF TRANSISTOR
NESG3031M05
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
• Maximum stable power gain: MSG = 14.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG)
ORDERING INFORMATION
Part Number
Order Number
Package
NESG3031M05 NESG3031M05-A
NESG3031M05-T1 NESG3031M05-T1-A
Flat-lead 4-pin thin-type super
minimold (M05, 2012 PKG)
(Pb-Free) ^Note
Quantity
Supplying Form
50 pcs
(Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
12.0
V
Collector to Emitter Voltage
VCEO
4.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
Total Power Dissipation
IC
Ptot ^Note
35
150
mA
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm² × 1.0 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10414EJ03V0DS (3rd edition)
Date Published November 2005 CP(K)
The mark  shows major revised points.