NESG3031M05-T1-A Datasheet, PDF (1/9 Pages) California Eastern Labs – NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)

NPN SILICON GERMANIUM RF TRANSISTOR
NESG3031M05
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
• Maximum stable power gain: MSG = 14.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG)
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ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG3031M05 NESG3031M05-A
NESG3031M05-T1 NESG3031M05-T1-A
Flat-lead 4-pin thin-type super
minimold (M05, 2012 PKG)
(Pb-Free)
50 pcs
(Non reel)
3
kpcs/reel
• 8 mm w ide embossed taping
• Pin 3 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V CBO
12.0
V
Collector to Emitter Voltage
V CEO
4.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Pow er Dissipation
Ptot ^Note
150
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
Note Mounted on 1.08 cm ²  1.0 mm (t) glass epoxy PWB
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10414EJ04V0DS (4th edition)
Date Published December 2008 NS
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