NESG270034 Datasheet, PDF (1/11 Pages) California Eastern Labs – NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)

NPN SILICON GERMANIUM RF TRANSISTOR
NESG270034
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (2 W)
3-PIN POWER MINIMOLD (34 PKG)
FEATURES
• This product is suitable for medium output power (2 W) amplification
Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz
• Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V
• 3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number
NESG270034
Order Number
NESG270034-AZ
Package
Quantity
Supplying Form
3-pin power minimold 25 pcs
(34 PKG) (Pb-Free) ^Note1, (Non reel)
2
• Magazine case
NESG270034-T1 NESG270034-T1-AZ
1 kpcs/reel • 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Notes 1. Contains Lead in the part except the electrode terminals.
2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
9.2
V
Emitter to Base Voltage
VEBO
2.8
V
Collector Current
Total Power Dissipation
IC
750
mA
Ptot ^Note
1.9
W
Junction Temperature
Storage Temperature
Tj
150
°C
Tstg
−65 to +150
°C
Note Mounted on 34.2 cm² × 0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10577EJ01V0DS (1st edition)
Date Published September 2005 CP(K)
© NEC Compound Semiconductor Devices, Ltd. 2005