NESG260234 Datasheet, PDF (1/11 Pages) NEC – 3-PIN POWER MINIMOLD

NPN SILICON GERMANIUM RF TRANSISTOR
NESG260234
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (1 W)
3-PIN POWER MINIMOLD (34 PKG)
FEATURES
• This product is suitable for medium output power (1 W) amplification
Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz
Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz
• MSG (Maximum Stable Gain) = 23 dB TYP. @ VCE = 6 V, Ic = 100 mA, f = 460 MHz
• Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V
• 3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG260234
NESG260234-AZ
3-pin power minimold 25 pcs
• Magazine case
(Pb-Free) ^{Note1, 2}
(Non reel)
NESG260234-T1 NESG260234-T1-AZ
1 kpcs/reel • 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Notes 1. Contains Lead in the part except the electrode terminals.
2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
9.2
V
Emitter to Base Voltage
VEBO
2.8
V
Collector Current
Total Power Dissipation
IC
600
mA
Ptot ^Note
1.9
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 34.2 cm² × 0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10547EJ02V0DS (2nd edition) _{The mark  shows major revised points.}
Date Published May 2005 CP(K)