NESG250134 Datasheet, PDF (1/13 Pages) California Eastern Labs – NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE)

NEC's NPN SiGe RF TRANSISTOR
FOR MEDIUM OUTPUT POWER
AMPLIFICATION (800 mW)
NESG250134
3-PIN POWER MINIMOLD (34 PACKAGE)
FEATURES
• THIS PRODUCT IS SUITABLE FOR
MEDIUM OUTPUT POWER (800 mW) AMPLIFICATION
PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz
PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz
• MAXIMUM STABLE GAIN:
MSG = 23 dB TYP @ VCE = 3.6 V, IC = 100 mA, f = 460 MHz
• SiGe TECHNOLOGY:
UHS2-HV process
• ABSOLUTE MAXIMUM RATINGS:
VCBO = 20 V
• 3-PIN POWER MINIMOLD (34 PACKAGE)
ORDERING INFORMATION
PART NUMBER
ORDER NUMBER
NESG250134-AZ
NESG250134-AZ
NESG250134-T1-AZ NESG250134-T1-AZ
PACKAGE
3-pin power minimold
(Pb-Free) ^Note1
QUANTITY
25 pcs (Non reel)
1 kpcs/reel
SUPPLYING FORM
• 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Note 1. Contains lead in the part except the electrode terminals.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot ^Note
Tj
Tstg
RATINGS
20
9.2
2.8
500
1.5
150
−65 to +150
Note Mounted on 34.2 cm² × 0.8 mm (t) glass epoxy PWB
UNIT
V
V
V
mA
W
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories