NESG2101M16 Datasheet, PDF (1/3 Pages) NEC – NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

PRELIMINARY DATA SHEET
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG2101M16
FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
• HIGH OUTPUT POWER:
P1dB = 21 dBm at 2 GHz
• LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
NF = 0.6 dB at 1 GHz
• HIGH MAXIMUM STABLE POWER GAIN:
MSG = 17 dB at 2 GHz
• LOW PROFILE M16 PACKAGE:
M16
6-pin lead-less minimold
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
DESCRIPTION
NEC's NESG2101M16 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators
NESG2101M16
M16
SYMBOLS
PARAMETERS AND CONDITIONS
P1dB
GL
NF
Ga
NF
Ga
MSG
|S21E|²
fT
Cre
ICBO
IEBO
hFE
Output Power at 1 dB Compression Point
VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT
Linear Gain, VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz,
Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Noise Figure at VCE = 2 V, IC = 7mA, f = 1 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSOPT, ZL = ZLOPT
Maximum Stable Gain¹ at VCE = 3 V, IC = 50 mA, f = 2 GHz
Insertion Power Gain at VCE = 3 V, IC = 50 mA, f = 2 GHz
Gain Bandwidth Product at VCE = 3 V, IC = 50 mA, f = 2 GHz
Reverse Transfer Capacitance² at VCB = 2 V, IE = 0 mA, f = 1 MHz
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain³ at VCE = 2 V, IC = 15 mA
Notes:
1. MSG =
S21
S12
2. Collector to base capacitance when the emitter pin is grounded.
3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
UNITS
dBm
dB
dB
dB
dB
dB
dB
dB
GHz
pF
nA
nA
MIN
11.0
14.5
11.5
14
130
TYP
21
15
0.9
13.0
0.6
19.0
17.0
13.5
17
0.4
190
MAX
1.2
0.5
100
100
260
California Eastern Laboratories