NESG2046M33 Datasheet, PDF (1/4 Pages) NEC – NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION

PRELIMINARY DATA SHEET
NEC's NPN SiGe TRANSISTOR
FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
NESG2046M33
FEATURES
• IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• HIGH BREAKDOWN VOLTAGE TECHNOLOGY
FOR SIGE TRANSISTORS :
VCEO (absolute maximum ratings) = 5.0 V
• 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
ORDERING INFORMATION
PART NUMBER
NESG2046M33-A
NESG2046M33-T3-A
QUANTITY
50 pcs (Non reel)
10 kpcs/reel
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot ^Note
Tj
Tstg
RATINGS
13
5
1.5
40
130
150
−65 to +150
Note Mounted on 1.08 cm² × 1.0 mm (t) glass epoxy PCB
UNIT
V
V
V
mA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories