NESG2031M16 Datasheet, PDF (1/3 Pages) California Eastern Labs – HIGH FREQUENCY TRANSISTOR

NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG2031M16
FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE:
NF = 0.8 dBm at 2 GHz
NF = 1.3 dBm at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 21.5 dB at 2 GHz
• LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
M16
DESCRIPTION
NEC's NESG2031M16 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
NESG2031M16
M16
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
NF
Ga
NF
Ga
MSG
|S21E|²
P1dB
OIP3
fT
Cre
ICBO
IEBO
hFE
Noise Figure at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
dB
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
dB
ZS = ZSOPT, ZL = ZLOPT
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz,
dB
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz,
dB
ZS = ZSOPT, ZL = ZLOPT
Maximum Stable Gain¹ at VCE = 3 V, IC = 20 mA, f = 2 GHz
dB
Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz
dB
Output Power at 1dB Compression Point at
VCE = 3 V, ICQ = 20 mA, f = 2 GHz
dBm
Output 3rd Order Intercept Point at VCE = 3 V, ICQ = 20 mA, f = 2 GHz dBm
Gain Bandwidth Product at VCE = 3 V, IC = 20 mA, f = 2 GHz
GHz
Reverse Transfer Capacitance² at VCB = 2 V, IE = 0 mA, f = 1 GHz
pF
Collector Cutoff Current at VCB = 5V, IE = 0
nA
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
DC Current Gain³ at VCE = 2 V, IC = 5 mA
Notes:
1. MSG = ^S21
S12
2. Collector to base capacitance when the emitter pin is grounded.
3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
MIN
15.0
19.0
16.0
20
130
TYP
MAX
1.3
10.0
0.8
1.1
17.0
21.5
18.0
13
23
25
0.15
0.25
100
100
190
260
California Eastern Laboratories