NESG2031M05 Datasheet, PDF (1/13 Pages) NEC – NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NPN SiGe RF TRANSISTOR
NESG2031M05
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE:
NF = 0.8 dBm at 2 GHz
NF = 1.3 dBm at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 21.5 dB at 2 GHz
• LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
M05
• Pb Free Available (-A)
DESCRIPTION
NEC's NESG2031M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide
range of applications including low noise amplifiers, medium power amplifiers, and oscillators.
NECʼs low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
NESG2031M05
M05
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
Noise Figure at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
dB
1.3
ZS = ZSOPT, ZL = ZLOPT
Ga
Associated Gain at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
dB
ZS = ZSOPT, ZL = ZLOPT
10.0
NF
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz,
dB
0.8
1.1
ZS = ZSOPT, ZL = ZLOPT
Ga
MSG
|S21E|²
Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Maximum Stable Gain¹ at VCE = 3 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz
dB
15.0
17.0
dB
19.0
21.5
dB
16.0
18.0
P1dB
Output Power at 1dB Compression Point at
VCE = 3 V, IC = 20 mA, f = 2 GHz
dBm
13
OIP3
Output 3rd Order Intercept Point at VCE = 3 V, IC = 20 mA, f = 2 GHz dBm
23
fT
Gain Bandwidth Product at VCE = 3 V, IC = 20 mA, f = 2 GHz
GHz
20
Cre
Reverse Transfer Capacitance² at VCB = 2 V, IC = 0 mA, f = 1 GHz
pF
25
0.15
0.25
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
100
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
hFE
DC Current Gain³ at VCE = 2 V, IC = 5 mA
nA
130
100
190
260
Notes:
1. MSG = ^S21
S12
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005