NESG2021M16 Datasheet, PDF (1/11 Pages) California Micro Devices Corp – NECs NPN SiGe HIGH FREQUENCY TRANSISTOR

NPN SILICON GERMANIUM RF TRANSISTOR
NESG2021M16
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain at low current amplifications
NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
<R> ORDERING INFORMATION
Part Number
Order Number
Package
NESG2021M16
NESG2021M16-A
NESG2021M16-T3 NESG2021M16-T3-A
6-pin lead-less minimold
(M16, 1208 PKG)
(Pb-Free)
Quantity
50 pcs
(Non reel)
10
kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the
perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot ^Note
Tj
Tstg
Ratings
13.0
5.0
1.5
35
175
150
65 to +150
Unit
V
V
V
mA
mW
C
C
Note Mounted on 1.08 cm²  1.0 mm (t) glass epoxy PCB
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10393EJ03V0DS (3rd edition)
Date Published September 2009 NS
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