NESG2021M05 Datasheet, PDF (1/14 Pages) California Eastern Labs – NECs NPN SiGe HIGH FREQUENCY TRANSISTOR

DATA SHEET
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG2021M05
FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
NF = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 22.5 dB at 2 GHz
• LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
• Pb Free
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
M05
DESCRIPTION
NEC's NESG2021M05 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
NECʼs low profile, flat lead style M05 Package provides high
frequency performance for compact wireless designs.
NESG2021M05
M05
SYMBOLS
NF
Ga
NF
Ga
MSG
|S21E|²
P1dB
OIP3
fT
Cre
ICBO
IEBO
hFE
PARAMETERS AND CONDITIONS
UNITS
Noise Figure at VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Maximum Stable Gain¹ at VCE = 3 V, IC = 10 mA, f = 2 GHz
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
Output Power at 1dB Compression Point at
VCE = 3 V, IC = 12 mA, f = 2 GHz
Output 3rd Order Intercept Point at VCE = 3 V, IC = 12 mA, f = 2 GHz
Gain Bandwidth Product at VCE = 3 V, IC = 10 mA, f = 2 GHz
Reverse Transfer Capacitance² at VCB = 2 V, IC = 0 mA, f = 1 GHz
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain³ at VCE = 2 V, IC = 5 mA
dB
dB
dB
dB
dB
dB
dBm
dBm
GHz
pF
nA
nA
MIN
15.0
20.0
17.0
20
130
TYP
1.3
10.0
0.9
18.0
22.5
19.0
9.0
17.0
25
0.1
190
MAX
1.2
0.2
100
100
260
Notes:
1. MSG = ^S21
S12
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
California Eastern Laboratories