NE97733 Datasheet, PDF (1/5 Pages) NEC – PNP SILICON HIGH FREQUENCY TRANSISTOR

SILICON TRANSISTOR
NE97733
PNP SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 8.5 GHz TYP
• HIGH SPEED SWITCHING CHARACTERISTICS
• NPN COMPLIMENT AVAILABLE: NE68133
• HIGH INSERTION POWER GAIN:
|S21E|² = 12 dB at 1 GHz
DESCRIPTION
The NE97733 PNP silicon transistor is designed for
ultrahigh speed current mode switching applications and
microwave amplifiers up to 3.5 GHz. The NE97733 offers
excellent performance and reliability at low cost.
33 (SOT 23 STYLE)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS PARAMETERS AND CONDITIONS
fT
Gain Bandwidth Product at VCE = -8 V, IC = -20 mA
UNITS
MIN
GHz
6.0
NF
Noise Figure at VCE = -8 V, IC = -3 mA
dB
|S21E|²
Insertion Power Gain at VCE = -8 V, IC = -20 mA, f = 1 GHz
dB
8.0
hFE
Forward Current Gain Ratio at VCE = -8 V, IC = -20 mA
20
ICBO
Collector Cutoff Current at VCB = -10 V, IE = 0
μA
IEBO
Emitter Cutoff Current at VBE = -1 V, IC = 0
μA
CRE2
Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz
pF
PT
Total Power Dissipation
mW
Notes:
1. Electronic Industrial Association of Japan.
2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE97733
2SA1977
33
TYP
8.5
1.5
12.0
40
0.5
MAX
3.0
100
-0.1
-0.1
0.1
200