NE85634 Datasheet, PDF (1/6 Pages) California Eastern Labs – NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

NPN SILICON RF TRANSISTOR
NE85634 / 2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
FEATURES
• Low noise and high gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
• High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
• Large Ptot : Ptot = 1.2 W (Mounted on 16 cm²  0.7 mm (t) ceramic substrate)
• Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number
NE85634-A
2SC3357-A
NE85634-T1-A
2SC3357-T1-A
Quantity
25 pcs (Non reel) (Pb-Free)
Supplying Form
• 12 mm wide embossed taping
1 kpcs/reel (Pb-Free)
• Collector face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Ratings
Unit
VCBO
20
V
VCEO
12
V
VEBO
3.0
V
IC
100
mA
Ptot ^Note
1.2
W
Tj
150
C
Tstg
65 to +150
C
Note Mounted on 16 cm²  0.7 mm (t) ceramic substrate
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10211EJ01V0DS (1st edition)
(Previous No. P10357EJ4V1DS00)
Date Published January 2003 CP(K)
The mark  shows major revised points.