NE856 Datasheet, PDF (1/26 Pages) NEC – NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN SILICON RF TRANSISTOR
NE856 SERIES
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 7 GHz
• LOW NOISE FIGURE:
1.1 dB at 1 GHz
E
B
• HIGH COLLECTOR CURRENT: 100 mA
• HIGH RELIABILITY METALLIZATION
• LOW COST
P ^{L E A S E N O T E : p a r t n u m b enrost DESCRIPTION}
T ^{h e f o l l o wdi nagt a s h e e t a r ed e s i g n . NEC's NE856 series of NPN epitaxial silicon transistors is}
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain, and high current capability equate to
wide dynamic range and excellent linearity. The NE856 series
t ^{h i s f o r n e w f o r offers excellent performance and reliability at low cost. This is}
achieved by NEC's titanium/platinum/gold metallization sys-
f ^{r o m e n d e d o f f i c e tem and their direct nitride passivated base surface process.}
The NE856 series is available in chip form and a Micro-x
r ^{e c o m m c a l l s a l e s package for high frequency applications. It is also available in}
several low cost plastic package styles.
00 (CHIP)
32 (TO-92)
Pdleetaasiel _s : _NE85600
N ^{E 8 5 6 3 5 NOISE FIGURE AND GAIN}
vs. FREQUENCY
N ^{E 8 5 6 3 9 R VCC = 10 V, IC 7 mA}
4.0
20
MSG
18 (SOT 343 STYLE)
35 (MICRO-X)
34 (SOT 89 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
3.5
GA
15
MAG
3.0
10
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
2.5
5
NFMIN
2.0
1.5
1.0
0.4 0.5
1.0
2
3
Frequency, f (GHz)
45
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 28, 2005