NE850R59 Datasheet, PDF (1/2 Pages) California Eastern Labs – C-BAND MEDIUM POWER GaAs MESFET

C-BAND MEDIUM POWER GaAs MESFET NE850R599A
FEATURES
• HIGH OUTPUT POWER: 0.5 W
• HIGH LINEAR GAIN: 9.5 dB
• HIGH EFFICIENCY (PAE): 38%
• SUPERIOR INTERMODULATION DISTORTION
• INDUSTRY STANDARD PACKAGING
DESCRIPTION
The NE850R599A is a medium power GaAs MESFET de-
signed for up to a 1/2W output stage or as a driver for higher
power devices. The device has no internal matching and can
be used at frequencies from UHF to 8.5 GHZ. Equivalent
performance in a chip package can be obtained by using only
1 cell of the NE8500100 chip. The chips used in this series
offer superior reliability and consistent performance for which
NEC microwave semiconductors are known.
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS
UNITS MIN TYP MAX
VDS Drain to Source Voltage V 9
10
TCH
Channel Temperature
°C
130
GCOMP Gain Compression
dB
3.0
RG
Gate Resistance
KΩ
1
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 99
5.2±0.3
1.0±0.1
4.0 MIN BOTH LEADS
Gate
φ2.2±0.2
4.3±0.2
Source
+.06
0.1 _-.02
0.2 MAX
1.7±0.15
Drain
0.6±0.1
5.2±0.3
11.0±0.15
15.0±0.3
6.0±0.2
4.0±0.1
5.0 MAX
1.2
ELECTRICAL CHARACTERISTICS (TC = 25°C)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
CHARACTERISTICS
POUT
Power Out at Fixed Input Power
ηADD
Power Added Efficiency
IDS
Drain Source Current
IGS
Gate to Source Current
GL
Linear Gain
IDSS
Saturated Drain Current
VP
Pinch-off Voltage
gm
Transconductance
RTH
Thermal Resistance (channel to case)
UNITS
dBm
%
A
mA
dB
mA
V
mS
°C/W
NE850R599A
99
MIN
TYP
MAX
25.5
26.5
38
140
-1.6
1.6
9.5
220
430
-3.0
-1.0
150
60
TEST CONDITIONS
PIN = 18.5 dBm¹
VDS = 10 V; IDSQ = 100 mA
f = 7.2 GHz; RG = 1 KΩ
PIN = 7 dBm²
VDS = 2.5 V; VGS = 0 V
VDS = 2.5 V; IDS = 2 mA
VDS = 2.5 V; IDS = IDSS
California Eastern Laboratories