NE85002 Datasheet, PDF (1/6 Pages) NEC – 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

2 WATT C-BAND NE85002
POWER GaAs MESFET SERIES
FEATURES
• CLASS A OPERATION
• HIGH EFFICIENCY: ηADD ≥ 39% TYP
• BROADBAND CAPABILITY
• PACKAGE OPTIONS:
Chip
Hermetic Package
• PARTIALLY MATCHED INPUT FOR PACKAGED
DEVICES
• PROVEN RELIABILITY
DESCRIPTION
The NE8500295 power GaAs FET covers the 3.5 to 8.5 GHz
frequency range with three different Class A, 2 W partially
matched devices. Each packaged device has an input lumped
element matching network.
SELECTION CHART
PART
NUMBER
NE8500200
NE8500295-4
NE8500295-6
NE8500295-8
TYPICAL PERFORMANCE
POUT
(dBm)
FREQUENCY
RANGE
(GHz)
GL
(dB)
33.8 MIN
2.0 to 10
8.0 MIN
33.8 MIN
3.5 to 4.5
10.5 MIN
33.8 MIN
5.5 to 6.5
9.5 MIN
33.5 MIN
7.5 to 8.5
8.0 MIN
The NE8500200 is the six-cell recessed gate chip used in the
"95" package. The device incorporates a Ti-Al gate structure,
SiO2 glassivation and plated heat sink technology.
ELECTRICAL CHARACTERISTICS (TC = 25°C)
SYMBOLS
IDSS
VP
gm
BVGDO
IGS
RTH
PTEST2
PART NUMBER
PACKAGE OUTLINE
NE8500200¹
00 (CHIP)
NE8500295-4
95
NE8500295-6
95
NE8500295-8
95
PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
Saturated Drain Current
VDS = 2.5 V, VGS = 0 V
mA 950
1900 950
1900 950
1900 950
1900
Pinch-off Voltage
VDS = 2.5 V, ID = 8 mA
V -3.0
-1.0 -3.0
-1.0 -3.0
-1.0 -3.0
-1.0
Transconductance
VDS = 2.5 V, ID = IDSS
mS
600
600
600
600
Drain-Gate Breakdown Voltage
IGD = 8 mA
V 18
18
18
18
Gate to Source Current, VDS = 10 V,
IDSQ = 450 mA, POUT = PTEST
mA -2.4
2.4 -2.4
2.4 -2.4
2.4 -2.4
2.4
Thermal Resistance (Channel-to-Case) °C/W
10 15
15
15
15
Power Output at Test Point
VDS = 10 V, IDS = 450 mA set
PIN = 27.0 dBm
PIN = 24.5 dBm
PIN = 25.5 dBm
dBm 33.8
dBm
dBm
33.8
33.8
33.5
GL
ηADD3
Linear Gain
VDS = 10 V, IDS = 450 mA
Power Added Efficiency
at PTEST
dB 8.0 9.0
%
42
10.5
47
9.5
45
8.0
39
Notes:
1. Six-cell chip: all cells are used. RF performance of the chip is
determined by packaging 10 chips per wafer. Wafer rejection
criteria for standard devices are 2 rejects per 10 samples.
2. This is a production test. Test frequencies are: -4 @ 4.2 GHz,
-6 @ 6.5 GHz, -8 and NE8500200 @ 8.5 GHz.
3. ^{ηADD =}
POUT - PIN _{x 100%}
VDS - ID
California Eastern Laboratories