NE8500100 Datasheet, PDF (1/4 Pages) California Eastern Labs – C-BAND MEDIUM POWER GaAs MESFET

C-BAND MEDIUM POWER GaAs MESFET ^NE8500100
NE8500199
FEATURES
• HIGH OUTPUT POWER: 1 W
• HIGH LINEAR GAIN: 9.0 dB
• HIGH EFFICIENCY: 37% (PAE)
• INDUSTRY STANDARD PACKAGING
• THIS DEVICE IS ALSO AVAILABLE AS A
TWO-CELL CHIP: NE8500100
DESCRIPTION
The NE8500199 is a medium power GaAs MESFET designed
for up to a 1W output stage or as a driver for higher power
devices. The device has no internal matching and can be
used at frequencies from UHF to 8.5 GHZ. The device is
available in the “99” package or in chip form. The chip is a two-
cell die; bonding both cells delivers the rated performance.
The NE850 Series Transistors are manufactured to NEC's
stringent quality assurance standards to ensure highest reli-
ability and consistent superior performance.
ABSOLUTE MAXIMUM RATINGS¹
(TC = 25 °C unless otherwise noted)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS
Drain to Source Voltage
V
15
VGD
Gate to Drain Voltage
V
-18
VGS
Gate to Source Voltage
V
-12
IDS
Drain Current
A
IDSS
IGS
Gate Current
mA
6.0
PT
Total Power Dissipation
W
6.0
TCH
TSTG
Channel Temperature
Storage Temperature
°C
175
°C -65 to +175
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS
UNITS MIN TYP MAX
VDS
Drain to Source Voltage
V
9
TCH
Channel Temperature
°C
GCOMP Gain Compression
dB
RG
Gate Resistance
KΩ
10
130
3.0
14
ELECTRICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER
PACKAGE OUTLINE
NE8500199
NE8500100
00 (Chip), 99
SYMBOLS
CHARACTERISTICS
POUT
Power Out at Fixed Input Power
GL
Linear Gain
ηADD
Collector Efficiency
IDS
Drain Source Current
IDSS
Saturated Drain Current
VP
Pinch-off Voltage
gm
Transconductance
RTH
Thermal Resistance
UNITS MIN
dBm
28.5
dB
%
mA
mA
330
V
-3.0
mS
°C/W
TYP
29.5
9.0
37
200
300
MAX
825
-1.0
60
TEST CONDITIONS
PIN = 21.0 dBm
f = 7.2 GHz
VDS = 10 V; IDSQ = 200 mA
RG = 1KΩ
VDS = 2.5 V; VGS = 0 V
VDS = 2.5 V; IDS = 4 mA
VDS = 2.5 V; IDS = IDSS
Channel to Case
California Eastern Laboratories