NE687M03 Datasheet, PDF (1/4 Pages) California Eastern Labs – NECs NPN SILICON TRANSISTOR

NEC's
NPN SILICON TRANSISTOR
NE687M03
FEATURES
• NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 14 GHz
• LOW NOISE FIGURE:
NF = 1.4 dB at 2 GHz
DESCRIPTION
NEC's NE687M03 transistor is designed for low noise, high
gain, and low cost requirements. This high fT part is well suited
for very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M03" package is ideal for today's
portable wireless applications. The NE687 is also available in
six different low cost plastic surface mount package styles.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
1.2±0.05
0.8±0.1
2
1.4 ±0.1 0.45
(0.9)
0.45
1
0.2
+0.1
-0
0.3
+0.1
-0
3
0.59±0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0.15-+00.0.15
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
fT
NF
|S21E|²
hFE²
ICBO
IEBO
CRE³
Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
Forward Current Gain at VCE = 2 V, IC = 20 mA
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz
GHz
GHz
dB
dB
dB
dB
μA
μA
pF
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE687M03
2SC5436
M03
MIN
TYP
MAX
9
14
7
12
1.3
2
1.3
2
8.5
10
6
9.0
70
130
0.1
0.1
0.4
0.8
California Eastern Laboratories