NE68719 Datasheet, PDF (1/5 Pages) California Eastern Labs – NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION FOR LOW-NOISE MICROWAVE AMPLIFICATION

NPN SILICON RF TRANSISTOR
NE68719
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR LOW-NOISE MICROWAVE AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
FEATURES
• Low noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• 3-pin ultra super minimold package
ORDERING INFORMATION
Part Number
NE68719-A
NE68719-T1-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot^Note
Tj
Tstg
Ratings
5
3
2
30
90
150
65 to +150
Unit
V
V
V
mA
mW
C
C
Note Free air
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10213EJ01V0DS (1st edition)
(Previous No. P12110EJ2V0DS00)
Date Published January 2003 CP(K)
The mark  shows major revised points.