NE685M13 Datasheet, PDF (1/9 Pages) California Eastern Labs – NPN SILICON TRANSISTOR

NEC's NPN SILICON TRANSISTOR NE685M13
FEATURES
• NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 12 GHz
• LOW NOISE FIGURE:
NF = 1.5 dB at 2 GHz
DESCRIPTION
NEC's NE685M13 transistor is designed for low noise, high
gain, and low cost requirements. This high fT part is well suited
for low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M13" package is ideal for today's
portable wireless applications. The NE685 is also available in
six different low cost plastic surface mount package styles.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
0.7±0.05
0.5^+ñ00..015
(Bottom View)
0.3
2
3
1
0.1
0.1
0.2
0.2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
fT
NF
|S21E|²
hFE2
ICBO
IEBO
CRE3
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz, ZS = ZOPT
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
Forward Current Gain at VCE = 3 V, IC = 10 mA
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
UNITS
GHz
dB
dB
µA
µA
pF
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE685M13
2SC5617
M13
MIN
TYP
MAX
12.0
1.5
2.5
7.0
11.0
75
140
0.1
0.1
0.4
0.7
3-155