NE68539 Datasheet, PDF (1/5 Pages) California Eastern Labs – NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD

DATA SHEET
NPN SILICON RF TRANSISTOR
NE68539 / 2SC4957
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN MINIMOLD
FEATURES
• Low Noise, High Gain
• Low Voltage Operation
• Low Reverse Transfer Capacitance
Cre = 0.3 pF TYP.
• 4-pin minimold Package
ORDERING INFORMATION
Part Number
2SC4957
2SC4957-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
9
V
Collector to Emitter Voltage
VCEO
6
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
Total Power Dissipation
IC
Ptot ^Note
30
180
mA
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10520EJ01V0DS (1st edition)
(Previous No. P10379EJ2V0DS00)
Date Published September 2004 CP(K)
The mark shows major revised points.