NE685 Datasheet, PDF (1/18 Pages) NEC – SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC'S SURFACE MOUNT NPN NE685
SILICON HIGH FREQUENCY TRANSISTOR SERIES
FEATURES
• LOW COST
• SMALL AND ULTRA SMALL SIZE PACKAGES
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz
• NOISE FIGURES OF 1.5 dB AT 2.0 GHZ
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
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NEC's family of high frequency, low cost, surface mount
t ^{h i s f o r n e w f o r devices are well suited for portable wireless communications}
and cellular radio applications.
f ^{r o m e n d e d o f f i c e The NE685 series of high fT (12 GHz) devices is suitable for}
r ^{e c o m m c a l l s a l e s very low voltage/low current, low noise applications. These}
products are ideal for applications up to 2.4 GHz where low
cost, high gain, low voltage, and low current are prime con-
cerns.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
Pdleetaasiel _s : _{ELECTRICAL CHARACTERISTICS (TA = 25°C)}
N ^{E 6 8 5 3 9 R PART NUMBER1}
EIAJ² REGISTERED NUMBER
PACKAGE OUTLINE
NE68518
2SC5015
18
NE68519
2SC5010
19
NE68530
2SC4959
30
NE68533
2SC4955
33
NE68539/39R
2SC4957
39
N ^{E 6 8 5 3 0 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX}
fT
N ^{E 6 8 5 3 3 NFMIN}
Gain Bandwidth Product at
VCE = 3V, IC = 10 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 3 V, IC = 3 mA, f = 2.0 GHz
GHz
dB
12
1.5 2.5
12
1.5 2.5
12
1.5 2.5
12
1.5 2.5
12
1.5 2.5
GNF Associated Gain at
VCE = 3V, IC = 3 mA, f = 2.0 GHz
dB
8.5
7.5
7
7
7.5
MAG Maximum Available Gain at
VCE = 3 V, IC = 10 mA, f = 2.0 GHz
dB
12
11
10
10.5
11
|S21E|² Insertion Power Gain at
VCE = 3V, IC =10 mA, f = 2.0 GHz
dB 9 11
79
7 8.5
78
9 10
hFE
Forward Current Gain³ at
VCE = 3 V, IC = 10 mA
75 110 150 75 110 150 75 110 150 75 110 150 75 110 150
ICBO Collector Cutoff Current
at VCB = 5 V, IE = 0 mA
μA
0.1
0.1
0.1
0.1
0.1
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
μA
0.1
0.1
0.1
0.1
0.1
CRE4 Feedback Capacitance at
VCB = 3 V, IE = 0 mA, f = 1 MHz
pF
0.3 0.5
0.4 0.7
0.4 0.7
0.4 0.7
0.3 0.5
PT
Total Power Dissipation
mW
150
125
150
180
180
RTH(J-A) Thermal Resistance
(Junction to Ambient)
°C/W
833
1000
833
620
620
RTH(J-C) Thermal Resistance(Junction to Case) °C/W
200
200
200
200
200
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW≤350 μs, duty cycle ≤2%.
4. The emitter terminal should be connected to the ground terminal
of the 3 terminal capacitance bridge.
California Eastern Laboratories