NE681M13 Datasheet, PDF (1/3 Pages) California Eastern Labs – NECs NP SILICON TRANSISTOR

NEC's NPN SILICON TRANSISTOR NE681M13
FEATURES
• NEW MINIATURE M13 PACKAGE:
– Small transistor outline –
1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 7 GHz
• LOW NOISE FIGURE:
NF = 1.4 dB
DESCRIPTION
NEC's NE681M13 transistor is ideal for low noise, high gain,
and low cost amplifier applications. NEC's new low profile/
flat lead style "M13" package is ideal for today's portable
wireless applications. The NE681 is also available in chip,
Micro-x, and six different low cost plastic surface mount
package styles.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
+0.1
0.5 _–0.05
0.15+–00..015
0.3
2
1.0
+0.1
–0.05
1
0.35
3
0.7
0.35
3
+0.1
0.2 _–0.05
1
0.1
0.5±0.05
2
0.1
0.15+–00..015
0.2
0.2
+0.1
0.125 _–0.05
Bottom View
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
fT
NF
|S21E|²
hFE2
ICBO
IEBO
CRE3
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz
Forward Current Gain at VCE = 3 V, IC = 7 mA
Collector Cutoff Current at VCB = 10 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
UNITS
GHz
dB
dB
µA
µA
pF
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE681M13
2SC5615
M13
MIN
TYP
MAX
4.5
7
1.4
2.7
10
12
80
145
0.8
0.8
0.9
California Eastern Laboratories