NE681 Datasheet, PDF (1/21 Pages) NEC – NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

SILICON TRANSISTOR
NE681 SERIES
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz
• LOW NOISE FIGURE:
1.2 dB at 1 GHz
b ^{e r s 1.6 dB at 2 GHz}
P ^{L E A S E N O T E : p a r t n u m • HIGH ASSOCIATED GAIN:}
n ^{o t 15 dB at 1 GHz}
The ^{followdinagtasheet aredesign. 12 dB at 2 GHz}
• LOW COST
from ^{thisended for noeffwice for DESCRIPTION}
NEC's NE681 series of NPN epitaxial silicon transistors are
designed for low noise, high gain, low cost amplifier applica-
r ^{e c o m m c a l l s a l e s tions. Both the chip and micro-x versions are suitable for}
amplifier applications up to 4 GHz. The NE681 die is also
available in six different low cost plastic surface mount pack-
age styles. NE681's unique device characteristics allow you to
P ^{l e a s e use a single matching point to simultaneously achieve both low}
noise and high gain.
E
B
00 (CHIP)
18 (SOT 343 STYLE)
35 (MICRO-X)
19 (3 PIN ULTRA
SUPER MINI MOLD)
dNNeEtEa66i88l1s13:359 R NOISE FIGURE, GAIN MSG
AND MAG vs. FREQUENCY
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
VCE = 3 V, IC = 5 mA
MSG
20
3.0
MAG
10
2.0
0
GA
NF
1.0
0.5
1.0
2.0 3.0
Frequency, f (GHz)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 28, 2005