NE680 Datasheet, PDF (1/19 Pages) NEC – NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz
• LOW NOISE FIGURE:
1.7 dB at 2 GHz
2.6 dB at 4 GHz
• HIGH ASSOCIATED GAIN:
12.5 dB at 2 GHz
8.0 dB at 4 GHz
E
B
• EXCELLENT LOW VOLTAGE
00 (CHIP)
35 (MICRO-X)
LOW CURRENT PERFORMANCE
P ^{L E A S E NOT E : part numbenrost DESCRIPTION}
T ^{h e f o l l o wdi nagt a s h e e t a r ed e s i g n . The NE680 series of NPN epitaxial silicon transistors is}
designed for low noise, high gain and low cost applications.
n ^{e w Both the chip and micro-x versions are suitable for applications}
t ^{h i s f o r f o r up to 6 GHz. The NE680 die is also available in six different low}
f ^{r o m e n d e d o f f i c e cost plastic surface mount package styles. The NE680's high}
fT makes it ideal for low voltage/low current applications, down
to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is
r ^{e c o m m c a l l s a l e s 35 mA. For higher current applications see the NE681 series.}
18 (SOT 343 STYLE)
19 (3 PIN ULTRA
SUPER MINI MOLD)
PdNleeEtaa6si8el0s3: _{5 NE68018}
NOISE FIGURE & ASSOCIATED GAIN
N E 6 8 0 3 9 R vs. FREQUENCY
25
6V, 5 mA
3V, 5 mA
20
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
15
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
2.5
10
2.0
5
1.5
1.0
.5
300 500
1000
2000
3000
Frequency, f (GHz)
California Eastern Laboratories