NE677M04 Datasheet, PDF (1/8 Pages) California Eastern Labs – MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's MEDIUM POWER
NPN SILICON HIGH FREQUENCY NE677M04
TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH:
fT = 15 GHz
• HIGH OUTPUT POWER:
P-1dB = 15 dBm at 1.8 GHz
• HIGH LINEAR GAIN:
GL = 15.5 dB at 1.8 GHz
• NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
DESCRIPTION
NEC's NE677M04 is fabricated using NEC's HFT3 wafer
process. With a transition frequency of 15 GHz, the NE677M04
is usable in applications from 100 MHz to 3 GHz. The NE677M04
provides P1dB of 15 dBm, even with low voltage and low
current, making this device an excellent choice for the driver
stage for mobile or fixed wireless applications.
2.05±0.1
1.25±0.1
+0.30^{+-00..0051(leads 1, 3 and ,4)}
NEC's NE677M04 is housed in NEC's new low profile/flat lead
style "M04" package
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
EIAJ³ REGISTRATION NUMBER
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
NE677M04
M04
2SC5751
SYMBOLS
ICBO
IEBO
hFE
P1dB
GL
MAG
|S21E|²
ηc
NF
fT
Cre
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current¹ Gain at VCE = 3 V, IC = 20 mA
Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 8 mA,
f = 1.8 GHz, Pin = 1 dBm
Linear Gain at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = -10 dBm
Maximum Available Gain⁴ at VCE = 3 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz
Collector Efficiency at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz,
Pin = 1 dBm
Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz, Zs =ZOPT
Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz
Reverse Transfer Capacitance² at VCB = 3 V, IC = 0, f = 1 MHz
UNITS
nA
nA
dBm
dB
dBm
dB
%
dB
GHz
pF
MIN
75
10.0
TYP
120
15.0
15.5
16.0
13.5
50
1.7
15
0.22
MAX
100
100
150
2.5
0.50
Notes:
1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan
4. MAG = |S21| (K ± K 2 - 1 ).
|S12|
California Eastern Laboratories