NE67400 Datasheet, PDF (1/7 Pages) California Eastern Labs – NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET

NEC's L TO Ku BAND LOW NOISE NE67400
AMPLIFIER N-CHANNEL GaAS MESFET NE67483B
FEATURES
• LOW NOISE FIGURE:
NF = 1.4 dB TYP at f = at 12 GHz
• HIGH ASSOCIATED GAIN:
GA = 10 dB TYP at f = 12 GHz
• GATE WIDTH: WG = 280 µm
• GATE LENGTH: LG = 0.3 µm
DESCRIPTION
NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This
device features a low noise figure with high associated gain,
employing a recessed 0.3 micron gate and triple epitaxial
technology. The active area of the chip is covered with SiD2
and Si3N4 for scratch protection and surface stability. This
device is suitable for both amplifier and oscillator applications.
This device is housed in a solder sealed hermetic, metal
ceramic package for high reliability in space applications.
NOISE FIGURE, ASSOCIATED GAIN
vs. FREQUENCY
24
VDS = 3 V
ID = 10 mA
20
3.0
16
GA
2.0
12
1.0
0
1
8
NF
4
2
4 6 8 10 14 20 30
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
NF
Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz
f = 12 GHz
NE67400
NE67483B
UNITS
MIN
TYP
MAX
dB
0.6
dB
1.4
1.6
GA
Associated Gain at VDS = 3 V ID = 10 mA, f = 4 GHz
f = 12 GHz
dB
14.0
dB
8.5
10.0
P1dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz,
VDS = 3 V, IDS = 30 mA
dBm
14.5
IDSS
Saturated Drain Current at VDS = 3 V, VGS = 0 V
mA
20
40
120
VGS(OFF) Gate to Source Cut Off Voltage at VDS = 3 V, ID = 100 µA
V
-0.5
-1.1
-3.5
gm
Transconductance at VDS = 3 V, ID = 10 mA
mS
20
50
100
IGSO
Gate to Source Leakage Current at VGS = -5 V
µA
1.0
10
RTH (CH-C) Thermal Resistance (Channel-to-Case)
NE67400
°C/W
190
NE67483B
°C/W
450
California Eastern Laboratories