NE66719 Datasheet, PDF (1/8 Pages) California Eastern Labs – NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
NE66719
FEATURES
• HIGH GAIN BANDWIDTH: fT = 21 GHz
• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
• HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz
DESCRIPTION
NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT
wafer process. This device is ideal for oscillator or low noise
amplifier applications at 2 GHz and above.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 19
1.6±0.1
0.8±0.1
2
3
1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS MIN
ICBO
IEBO
hFE
fT
MAG
MSG
|S21e|²
|S21e|²
NF
IP3
Cre
Collector Cutoff Current at VCB = 5V, IE = 0
nA
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
Forward Current Gain² at VCE = 2 V, IC = 5 mA
50
Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz
GHz
18
Maximum Available Power Gain⁴ at VCE = 2 V, IC = 20 mA, f = 2 GHz dB
Maximum Stable Gain⁵ at VCE = 2 V, IC = 20 mA, f = 2 GHz
dB
Insertion Power Gain at VCE = 1 V, IC = 10 mA, f = 2 GHz
dB
9.0
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
dB
9.5
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT
dB
Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz
Feedback Capacitance³ at VCB = 2 V, IC = 0, f = 1 MHz
pF
NE66719
2SC55667
19
TYP
70
21
12.5
13.5
11.0
11.5
1.1
22
0.24
MAX
100
100
100
1.5
0.30
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
( ) ^{4. MAG = S21}
S12
K- (K² -1)
5. MSG =
S21
S12
California Eastern Laboratories