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NE662M04 Datasheet, PDF (1/11 Pages) NEC – NPN SILICON HIGH FREQUENCY TRANSISTOR
NPN SILICON RF TRANSISTOR
NE662M04
NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH: fT = 25 GHz
• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
• HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz
• NEW LOW PROFILE M04 PACKAGE:
• SOT-343 footprint, with a height of just 0.59 mm
• Flat Lead Style for better RF performance
M04
DESCRIPTION
NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the
NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current
performance.
NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE662M04 is an ideal choice
for LNA and oscillator requirements in all mobile communication systems.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
NE662M04
2SC5508
M04
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS MIN
TYP
MAX
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
hFE
Forward Current Gain2 at VCE = 2 V, IC = 5 mA
50
fT
Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz
GHz
20
MAG
Maximum Available Power Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz dB
MSG
Maximum Stable Gain5 at VCE = 2 V, IC = 20 mA, f = 2 GHz
dB
|S21E|2
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
dB
14
NF
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT
dB
P1dB
Output Power at 1 dB compression point at
VCE = 2 V, IC = 20 mA, f = 2 GHz
dBm
IP3
Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz
Cre
Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz
pF
200
200
70
100
25
20
20
17
1.1
1.5
11
22
0.18
0.24
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
( ) 4. MAG = S21
S12
K- (K2 -1)
5. MSG = S21
S12
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005