NE66219 Datasheet, PDF (1/6 Pages) California Eastern Labs – NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

NPN SILICON RF TRANSISTOR
NE66219 / 2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE · HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
FEATURES
• Suitable for high-frequency oscillation
• fT = 25 GHz technology adopted
• 3-pin ultra super minimold (19, 1608 PKG) package
<R> ORDERING INFORMATION
Part Number Order Number
Package
NEC66219
2SC5606
NE66219-A
2SC5606-A
3-pin ultra super minimold
(19, 1608 PKG) (Pb-Free)
NE66219-T1 NE66219-T1-A
2SC5606-T1 2SC5606-T1-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot^Note
Tj
Tstg
Ratings
15
3.3
1.5
35
115
150
65 to +150
Unit
V
V
V
mA
mW
C
C
Note Mounted on 1.08 cm²  1.0 mm (t) glass epoxy substrate
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10781EJ01V0DS (1st edition)
(Previous No. P14658EJ3V0DS00)
Date Published August 2009 NS
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