NE6510179A Datasheet, PDF (1/10 Pages) California Eastern Labs – NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

NEC's 3W, L&S-BAND
MEDIUM POWER GaAs HJ-FET
NE6510179A
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
• USABLE TO 3.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
• HIGH OUTPUT POWER:
35 dBm TYP with 5.0 V Vdc
32.5 dBm TYP with 3.5 V Vdc
• HIGH LINEAR GAIN:
10 dB TYP at 1.9 GHz
• LOW THERMAL RESISTANCE:
5°C/W
DESCRIPTION
NEC's NE6510179A is a GaAs HJ-FET designed for medium
power mobile communications, Fixed Wireless Access, ISM,
WLL, PCS, IMT-2000, and MMDS transmitter and subscriber
applications. It is capable of delivering 1.8 watts of output
power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V
with high linear gain, high efficiency, and excellent linearity.
Reliability and performance uniformity are assured by NEC's
stringent quality and control procedures.
OUTLINE DIMENSIONS (Units in mm)
Gate
PACKAGE OUTLINE 79A
4.2 MAX
Source
Drain
Gate
1.5 – 0.2
Source
Drain
0.4 – 0.15
5.7 MAX
0.8 MAX
3.6 – 0.2
BOTTOM VIEW
Note: Unless otherwise specified, tolerance is ±0.2 mm
ELECTRICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
POUT
Output Power
GL
ηADD
Linear Gain¹
Power Added Efficiency
ID
Drain Current
IDSS
Saturated Drain Current
VP
Pinch-Off Voltage
RTH
Thermal Resistance
UNITS
dBm
dB
%
A
A
V
°C/W
NE6510179A
79A
MIN
TYP
MAX
31.5
32.5
10.0
50
58
0.72
2.4
-2.0
-0.4
5
8
TEST CONDITIONS
f = 1900 MHz, VDS = 3.5 V,
Pin = +25 dBm, Rg = 100 Ω
IDSQ = 200 mA (RF OFF)²
VDS = 2.5 V; VGS = 0 V
VDS = 2.5 V; ID = 14 mA
Channel to Case
BVGD Gate to Drain Breakdown Voltage
V
12
IGD = 14 mA
Notes:
1. Pin = 0 dBm
2. DC performance is tested 100% . Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
California Eastern Laboratories