NE650103M Datasheet, PDF (1/7 Pages) California Eastern Labs – 10 W L & S-BAND POWER GaAs MESFET

NEC'S 10 W L & S-BAND
POWER GaAs MESFET
NE650103M
FEATURES
• LOW COST PLASTIC PACKAGE
• USABLE TO 2.7 GHz:
PCS, W-CDMA, WLL, Satellite Uplink, BWA
• HIGH OUTPUT POWER:
40 dBm TYP
• HIGH POWER ADDED EFFICIENCY:
45 % TYP at 2.3 GHz
• LOW THERMAL RESISTANCE:
4.0° C/W
• LEAD-FREE
DESCRIPTION
NEC's NE650103M is a 10 W GaAs MESFET designed for
PCS, W-CDMA, WLL transmitter applications. It is capable of
delivering 10 Watts of output power with high linear gain, high
efficiency and excellent linearity. Reliability and performance
uniformity are assured by NEC's stringent quality and control
procedures
OUTLINE DIMENSIONS (Units in mm)
2-φ 3.3 ± 0.3
PACKAGE OUTLINE 3M
20.32 ± 0.15
14.27 ± 0.15
3.5 ± 0.2
GATE
DRAIN
SOURCE
2.04 ± 0.3
8.54 ± 0.2
0.15 ± 0.05
ELECTRICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
P1dB
Power Out at 1dB Gain Compression
GL
Linear Gain (at Pin ≤ 23 dBm)
ηADD
Power Added Efficiency
IDSS
Saturated Drain Current
VP
Pinch-Off Voltage
RTH
Thermal Resistance
UNITS
dBm
dB
%
A
V
°C/W
NE650103M
3M
MIN
TYP
MAX
39.0
40.0
10.0
11.0
45
2.0
5.0
7.0
-4.0
-2.5
-1.0
4.0
4.5
TEST CONDITIONS
f = 2.3 GHz, VDS = 10.0 V
Rg = 100 Ω
IDSQ ≤ 1.5 A (RF OFF)
VDS = 2.5 V; VGS = 0 V
VDS = 2.5 V; IDS = 23 mA
Channel to Case
California Eastern Laboratories