NE6500379A Datasheet, PDF (1/7 Pages) NEC – 3W L, S-BAND POWER GaAs MESFET

NEC'S 3W, L/S-BAND
MEDIUM POWER GaAs MESFET
NE6500379A
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
• USABLE TO 2.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
• HIGH OUTPUT POWER:
35 dBm TYP
• HIGH LINEAR GAIN:
10 dB TYP at 1.9 GHz
• LOW THERMAL RESISTANCE:
5 C/W
DESCRIPTION
NEC's NE6500379A is a 3 W GaAs MESFET designed for
medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-
2000, and return path MMDS transmitter applications. It is
capable of delivering 3 Watts of output power with high linear
gain, high efficiency and excellent linearity. Reliability and
performance uniformity are assured by NEC's stringent qual-
ity and control procedures
OUTLINE DIMENSIONS (Units in mm)
Gate
PACKAGE OUTLINE 79A
4.2 MAX
Source
Drain
Gate
1.5 – 0.2
Source
Drain
0.4 – 0.15
5.7 MAX
0.8 MAX
3.6 – 0.2
BOTTOM VIEW
Note: Unless otherwise specified, tolerance is ±0.2 mm
ELECTRICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
P1dB
Power Out at 1dB Gain Compression
GL
Linear Gain¹
ηADD
Power Added Efficiency
ID
Drain Current
IDSS
Saturated Drain Current
VP
Pinch-Off Voltage
UNITS
dBm
dB
%
A
A
V
NE6500379A
79A
MIN
TYP
MAX
35.0
9.0
10.0
50
1.0
4.5
-3.6
-2.6
-1.6
TEST CONDITIONS
f = 1.9 GHz, VDS = 6.0 V
Rg = 30 Ω
IDSQ = 500 mA (RF OFF)²
VDS = 2.5 V; VGS = 0 V
VDS = 2.5 V; IDS = 21 mA
RTH
Thermal Resistance
°C/W
5
6
Channel to Case
BVGD Gate-to-Drain Breakdown Voltage
V
17
IGD = 21 mA
Notes:
1. Pin = 0 dBm
2. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
California Eastern Laboratories