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| NE5550279A Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon Power LDMOS FET | |||
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A Business Partner of Renesas Electronics Corporation.
NE5550279A
Silicon Power LDMOS FET
Data Sheet
R09DS0033EJ0200
Rev.2.00
Jul 04, 2012
FEATURES
⢠High Output Power
: Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
⢠High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
⢠High Linear gain
: GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)
⢠High ESD tolerance
⢠Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
⢠150 MHz Band Radio System
⢠460 MHz Band Radio System
⢠900 MHz Band Radio System
ORDERING INFORMATION
Part Number
NE5550279A
Order Number
NE5550279A-A
Package
79A
(Pb Free)
Marking
W7
Supplying Form
⢠12 mm wide embossed taping
⢠Gate pin faces the perforation side of the tape
NE5550279A-T1 NE5550279A-T1-A
⢠12 mm wide embossed taping
⢠Gate pin faces the perforation side of the tape
⢠Qty 1 kpcs/reel
NE5550279A-T1A NE5550279A-T1A-A
⢠12 mm wide embossed taping
⢠Gate pin faces the perforation side of the tape
⢠Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550279A-A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
(50% Duty Pulsed)
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note: Value at TC = 25°C
Symbol
VDS
VGS
I DS
IDS-pulse
Ptot
Tch
Tstg
Ratings
30
6.0
0.6
1.2
6.25
150
â55 to +150
Unit
V
V
A
A
W
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0033EJ0200 Rev.2.00
Jul 04, 2012
Page 1 of 7
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