NE5531079A Datasheet, PDF (1/8 Pages) California Eastern Labs – 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS

SILICON POWER MOS FET
NE5531079A
7.5 V OPERATION SILICON RF POWER LDMOS FET
FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology
and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% power added
efficiency at 460 MHz with 7.5 V supply voltage.
FEATURES
• High output power
: Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
• High power added efficiency : add = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
• High linear gain
: GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
• Surface mount package
: 5.7  5.7  1.1 mm MAX.
• Single supply
: VDS = 7.5 V MAX.
APPLICATIONS
• 460 MHz band radio systems
• 900 MHz band radio systems
ORDERING INFORMATION
Part Number
NE5531079A
Order Number
NE5531079A-A
NE5531079A-T1 NE5531079A-T1-A
NE5531079A-T1A NE5531079A-T1A-A
Package
79A (Pb-Free)
Marking
Supplying Form
W5 • 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5531079A-A
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10752EJ01V0DS (1st edition)
Date Published April 2009 NS