NE552R479A-T1-A Datasheet, PDF (1/7 Pages) California Eastern Labs – 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

DATA SHEET
SILICON POWER MOS FET
NE552R479A
3.0 V OPERATION SILICON RF POWER LDMOS FET
FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology (our
WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 26.0 dBm
output power with 45% power added efficiency at 2.45 GHz under the 3.0 V supply voltage.
FEATURES
• High output power
: Pout = 26.0 dBm TYP. (VDS = 3.0 V, IDset = 200 mA, f = 2.45 GHz, Pin = 19 dBm)
• High power added efficiency : add = 45% TYP. (VDS = 3.0 V, IDset = 200 mA, f = 2.45 GHz, Pin = 19 dBm)
• High linear gain
: GL = 11 dB TYP. (VDS = 3.0 V, IDset = 200 mA, f = 2.45 GHz, Pin = 10 dBm)
• Surface mount package
: 5.7  5.7  1.1 mm MAX.
• Single supply
: VDS = 2.8 to 6.0 V
APPLICATIONS
• Digital cellular phones
• Analog cellular phones
• Bluetooth^TM applications
• Others
: 3.0 V GSM1900 Pre Driver
: 2.8 V AMPS Handsets
: 3.0 V Class 1 Devices
: 3.0 V Two-Way Pagers
ORDERING INFORMATION
Part Number
NE552R479A-T1
NE552R479A-T1A
Package
79A
Marking
AW
Supplying Form
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE552R479A-A
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10124EJ03V0DS (3rd edition)
Date Published July 2003 CP(K)
The mark  shows major revised points.