NE5520279A Datasheet, PDF (1/8 Pages) NEC – NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

NEC'S 3.2 V, 2 W, L&S BAND
MEDIUM POWER SILICON LD-MOSFET
NE5520279A
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE:
5.7x5.7x1.1 mm MAX
• HIGH OUTPUT POWER:
+32 dBm TYP
• HIGH LINEAR GAIN:
10 dB TYP @ 1.8 GHz
• HIGH POWER ADDED EFFICIENCY:
45% TYP at 1.8 GHz
• SINGLE SUPPLY:
2.8 to 6.0 V
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
4.2 MAX.
(Bottom View)
1.5±0.2
Source
Source
Gate
Drain
Gate
Drain
0.4±0.15
5.7 MAX.
0.8 MAX.
3.6±0.2
DESCRIPTION
NEC's NE5520279A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the power amplifier
for mobile and fixed wireless applications. Die are manu-
factured using NEC's NEWMOS technology (NEC's 0.6 μm
WSi gate lateral MOSFET) and housed in a surface mount
package.
APPLICATIONS
• DIGITAL CELLULAR PHONES:
3.2 V DCS1800 Handsets
• 0.7-2.5 GHz FIXED WIRELESS ACCESS
• W-LAN
• SHORT RANGE WIRELESS
• RETAIL BUSINESS RADIO
• SPECIAL MOBILE RADIO
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
UNITS
POUT
Output Power
dBm
GL
Linear Gain
dB
ηADD
Power Added Efficiency
%
ID
Drain Current
mA
IGSS
Gate-to-Source Leakage Current
nA
IDSS
Saturated Drain Current
nA
(Zero Gate Voltage Drain Current)
VTH
Gate Threshold Voltage
V
gm
Transconductance
S
BVDSS Drain-to-Source Breakdown Voltage
V
RTH
Thermal Resistance
°C/W
NE5520279A
79A
MIN
TYP
MAX
30.5
32.0
10
40
45
800
100
100
1.0
1.4
1.9
1.3
15
18
8
Notes:
1. DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2. Pin = 5 dBm
TEST CONDITIONS
f = 1.8 GHz, VDS = 3.2 V,
IDSQ = 700 mA, PIN = 25 dBm, except
PIN = 5 dBm for Linear Gain
VGS = 5.0 V
VDS = 6.0 V
VDS = 3.5 V, IDS = 1 mA
VDS = 3.5 V, IDS = 700 mA
IDSS = 10 μA
Channel-to-Case
California Eastern Laboratories