NE5500179A Datasheet, PDF (1/5 Pages) NEC – SILICON POWER MOS FET

4.8 V OPERATION SILICON RF
POWER MOSFET FOR GSM1800 AND NE5500179A
GSM1900 TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER:
29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA,
f = 1.9 GHz, PIN = 20 dBm
• HIGH POWER ADDED EFFICIENCY:
55% TYP at VDS = 4.8 V, IDQ = 100 mA,
f = 1.9 GHz, PIN = 20 dBm
• HIGH LINEAR GAIN:
14 dB TYP at VDS = 4.8 V, IDQ = 100 mA,
f = 1.9 GHz, PIN = 0 dBm
• SURFACE MOUNT PACKAGE:
5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY:
3.0 to 6.0 V
OUTLINE DIMENSIONS (Units in mm)
Gate
PACKAGE OUTLINE 79A
4.2 Max
Source
Drain
Gate
1.5 ± 0.2
Source
Drain
0.4 ± 0.15
5.7 Max
0.8 Max
3.6 ± 0.2
Bottom View
DESCRIPTION
The NE5500179A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
4.8 V GSM1800 and GSM1900 handsets. Dies are manufac-
tured using NEC's NEWMOS technology (NEC's 0.6 µm WSi
gate lateral MOSFET) and housed in a surface mount pack-
age. This device can deliver 29.5 dBm output power with
55% power added efficiency at 1.9 GHz under the 4.8 V sup-
ply voltage, or can deliver 27 dBm output power with 50%
power added efficiency at 3.5 V by varying the gate voltage
as a power control function.
APPLICATIONS
• DIGITAL CELLULAR PHONES
• DIGITAL CORDLESS PHONES
• OTHERS
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
UNITS MIN
IGSS
Gate to Source Leakage Current
nA
-
IDSS
Drain to Source Leakage Current
nA
-
VTH
Gate Threshold Voltage
V
1.0
gm
Transconductance
S
-
RDS(ON) Drain to Source On Resistance
-
-
BVDSS
Drain to Source Breakdown Voltage
V
20
TYP
-
-
1.35
0.41
1.00
24
NE5500179A
79A
MAX
TEST CONDITIONS
100
VGSS = 6.0 V
100
VDSS = 8.5 V
2.0
VDS = 4.8 V, IDS = 1 mA
-
VDS = 4.8 V, IDS1 = 150 mA, IDS2 = 250 mA
-
VGS = 6.0 V, VDS = 0.5 V
-
IDSS = 10 A
California Eastern Laboratories