NE52418 Datasheet, PDF (1/6 Pages) California Eastern Labs – NECs L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

NEC's L TO S BAND NE52418
LOW NOISE AMPLIFIER NPN GaAs HBT
FEATURES
PACKAGE DIMENSIONS (Units in mm)
• HIGH POWER GAIN:
GA = 16 dB TYP , MSG = 18 dB TYP
at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
• LOW NOISE:
NF = 1.0 dB TYP
at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω
• OIP3 = +25 dBm TYP
at f = 2 GHZ, VCE = 2 V, IC = 10 mA, ZS = ZOPT ,1TONE
• 4 PIN SUPER MINI MOLD PACKAGE
• GROUNDED EMITTER TRANSISTOR
DESCRIPTION
PACKAGE OUTLINE 18
2.1 ± 0.2
1.25 ± 0.1
0.3+-00..1005
(LEADS 2, 3, 4)
2.0 ± 0.2 0.65
2
0.60
1
0.4+-00..1005
0.3
3 _0.65
1.3
0.65
4
NEC's NE52418 is a low cost NPN GaAs HBT(InGaP)
suitable for front end LNA's in L/S band mobile communica-
tions applications. The NE52418 is housed in a 4-pin super
mini-mold package, making it ideal for high-density design.
NEC's stringent quality assurance and test procedures
ensure the highest reliability performance
ELECTRICAL CHARACTERISTICS (TA = 25°C)
0.9 ± 0.1
0 to 0.1
+0.10
0.15 _-0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Emitter
4. Collector
PART NUMBER
PACKAGE OUTLINE
NE52418
18
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
IEBO
Emitter to Base Leakage Current at VEBO = 3 V
µA
—
ICBO
Collector to Base Leakage Current at VCBO = 3 V
µA
—
hFE
DC Current Gain at VCE = 2 V, IC = 3 mA
—
100
NF
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 Ghz, ZS = ZL = 50 Ω dB
—
Ga
Associated Gain at VCE = 2 V, IC = 3 mA, f = 2 Ghz,
dB
14
|S21e|²
ZS = ZL = 50 Ω
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 Ghz
dB
—
OIP3
Out Third - Order Distortion Intercept Point at VCE = 2 V,
dBm
—
f = 2 GHz, ZS = ZL = ZOPT, IC = 10 mA, 1 tone
TYP
0.2
0.2
140
1.0
16
20
25
MAX
1.0
1.0
180
1.5
—
—
—
California Eastern Laboratories