NE46234 Datasheet, PDF (1/7 Pages) California Eastern Labs – NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD

NPN SILICON RF TRANSISTOR
NE46234 / 2SC4703
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
3-PIN POWER MINIMOLD
DESCRIPTION
The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage
(VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It
employs surface mount type plastic package, power mini mold (SOT-89).
FEATURES
• Low distortion, low voltage: IM2 = 55 dBc TYP., IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, VO = 105 dBV/75
• Large Ptot : Ptot = 1.8 W (Mounted on double-sided copper-clad 16 cm²  0.7 mm (t) ceramic substrate)
• Small package : 3-pin power mini mold package
ORDERING INFORMATION
Part Number
NE46234-AZ
2SC4703
NE46234-T1-AZ
2SC4703-T1
Quantity
25 pcs (Non reel)
1 kpcs/reel
Supplying Form
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
2.5
V
Collector Current
Total Power Dissipation
IC
150
mA
Ptot ^Note
1.8
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
Note Mounted on double-sided copper-clad 16 cm²  0.7 mm (t) ceramic substrate
Document No. PU10339EJ01V1DS (1st edition)
Date Published May 2003 CP(K)
The mark  shows major revised points.