NE429M01 Datasheet, PDF (1/6 Pages) NEC – C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

PRELIMINARY DATA SHEET
C to Ku BAND SUPER LOW ^NE429M01
NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
• LOW NOISE FIGURE & HIGH ASSOCIATED GAIN:
NF = 0.9 dB TYP, GA = 10 dB TYP at f = 12 GHz
• 6 PIN SUPER MINIMOLD PACKAGE
• GATE WIDTH: Wg = 200µm
DESCRIPTION
The NE429M01 is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for second
and third stage low noise amplifiers in DBS, TVRO and other
commercial systems.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
20
VDS = 2 V
ID = 10 mA
2.0
16
Ga
1.5
12
1.0
8
0.5
0
1
4
NF
2
4 6 8 10 14
Frequency, f (GHz)
0
20 30
RECOMMENDED
OPERATING CONDITIONS (TA = 25°C)
SYMBOLS
VDS
ID
Pin
CHARACTERISTICS UNITS MIN TYP MAX
Drain to Source Voltage V
23
Drain Current
mA
10 20
Input Power
dBm
0
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
NF
Noise Figure at
f = 12 GHz,
f = 4 GHz
dB
VDS = 2 V
GA
Associated Gain at f = 12 GHz,
ID = 10 mA
dB
9
f = 4 GHz
Gm
Transconductance at VDS = 2 V, ID = 10 mA
mS
45
IDSS
Saturated Drain Current at VDS = 2 V, VGS = 0 V
mA
20
VGS (OFF) Gate to Source Cutoff Voltage at VDS = 2 V, ID = 100 µA
V
-0.2
IGSO
Gate to Source Leak Current at VGS = -3 V
µA
NE429M01
M01
TYP
0.9
0.4
10
15.0
60
60
-0.7
0.5
MAX
1.2
90
-2.0
10
California Eastern Laboratories