NE4210S01 Datasheet, PDF (1/7 Pages) NEC – X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NEC's SUPER LOW NOISE HJ FET NE4210S01
FEATURES
• SUPER LOW NOISE FIGURE:
0.50 dB TYP at f = 12 GHz
• HIGH ASSOCIATED GAIN:
13.0 dB TYP at f = 12 GHz
• GATE LENGTH: LG ≤ 0.20 µm
• GATE WIDTH: WG = 160 µm
DESCRIPTION
NEC'S NE4210S01 is a pseudomorphic Hetero-Junction FET
that uses the junction between Si-doped AIGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling. Its excellent low
noise figure and high associated gain make it suitable for DBS
and commercial systems. The NE4210S01 is housed in a low
cost plastic package which is available in tape and reel.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
OUTLINE DIMENSION (Units in mm)
PACKAGE OUTLINE SO1
2.0 – 0.2
1
2.0 _{– 0.2}
2
L
0.5
TYP
4
2.0–0.2
0.125 – 0.05
3
0.65 TYP
1.9 – 0.2
1.6
1. Source
2. Drain
3. Source
4. Gate
0.4 MAX
4.0 – 0.2
1.5 MAX
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
GA
NF
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Associated Gain¹, VDS = 2 V, ID = 10 mA, f = 12 GHz
Noise Figure¹, VDS = 2 V, ID = 10 mA, f = 12 GHz
UNITS
dB
dB
NE4210S01
S01
MIN
TYP
MAX
11.0
13.0
0.50
0.70
gm
Transconductance, VDS = 2 V, ID = 10 mA
mS
40
55
IDSS
Saturated Drain Current, VDS = 2 V, VGS = 0 V
mA
15
40
70
VP
Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µA
V
-0.2
-0.7
-2.0
IGSO
Gate to Source Leakage Current, VGS = -3 V
µA
0.5
10
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories